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The research group « Electronics Microtechnology and Communication –EMC– » (code: UR13ES76) is belonging to the National School of Engineers of Sfax –ENIS-. The developed research activities are targeting the integration of circuits and microelectronic systems for diverse applications. The main proposed applications concern the medical domain, the telecommunications and mobile robotics.

Recent Publications

  • Francis LA, Amor S, André N, Kilchytska V, Gérard P, Ali Z, Udrea F, and Flandre D.

    A Low-Power and In Situ Annealing Technique for the Recovery of Active Devices After Proton Irradiation , Francis LA, Amor S, André N, Kilchytska V, Gérard P, Ali Z, Udrea F, and Flandre D. A Low-Power and In Situ Annealing Technique for the Recovery of Active Devices After Proton Irradiation. EPJ Web of Conferences; 2018: EDP Sciences ; 170. , 2018-01-10

    [Abstract] [Full Text]
    Abstract
    In this paper, we study the recovery of onmembrane semiconductor components, such as N-type Field-Effect Transistors (FETs) available in two different channel widths and a Complementary Metal-Oxide-Semiconductor (CMOS) inverter, after the exposure to high dose of proton radiation. Due to the ionizing effect, the electrical characteristics of the components established remarkable shifts, where the threshold voltages showed an average shift of -480 mV and -280 mV respectively for 6 ?m and 24 ?m N-channel transistors, likewise the inversion point of the inverter showed an important shift of -690 mV. The recovery concept is based mainly on a micro-hotplate, fabricated with backside MEMS micromachining structure and a Silicon-On-Insulator (SOI) technology, ensuring rapid, low power and in situ annealing technique, this method proved its reliability in recent works. Annealing the N-channel transistors and the inverter for 16 min with a temperature of the heater up to 385 °C, guaranteed a partial recovery of the semiconductor based components with a maximum power consumption of 66 mW.


  • Jamel NEBHEN; Stephane MEILLERE; Mohamed MASMOUDI

    A high linear and temperature compensation ring VCO for random number generator , ASP Journal of Low Power Electronics, JOLPE, Vol. 13, N° 4, December 2017. , 2017-12-01

    [Abstract]
    Abstract
    In this paper, we propose a very simple ring VCO structure for use in a variety of applications ranging from the data encryption and mathematical simulation to the built-in-self test (BIST) of RF receivers. The proposed ring VCO has two advantages; its linearity is greatly improved compared to published VCO and the circuit is temperature compensated through a bandgap reference. The chip is fabricated in AMS 0.35 ?m CMOS technology with 2.5 V power supply. The total area is 0.02 mm2. A series of measurement results confirm the validity of the proposed circuit. Operating at 2.5 V, the output frequency is within 300 ± 2 MHz over the temperature range of -20 °C to 80 °C with power consumption of 400 ?W.


  • Amor S, André N, Kilchytska V, Tounsi F, Mezghani B, Gérard P, Ali Z, Udrea F, Flandre D, and Francis LA.

    In-situ Thermal Annealing of On-Membrane SOI Semiconductor-Based Devices After High Gamma Dose Irradiation. , Amor S, André N, Kilchytska V, Tounsi F, Mezghani B, Gérard P, Ali Z, Udrea F, Flandre D, and Francis LA. In-situ thermal annealing of on-membrane silicon-on-insulator semiconductor-based devices after high gamma dose irradiation. Nanotechnology. 2017;28(18):184001. , 2017-04-07

    [Abstract] [Full Text]
    Abstract
    In this paper, we investigate the recovery of some semiconductor-based components, such as N/P-type field-effect transistors (FETs) and a Complementary Metal-Oxide-Semiconductor (CMOS) inverter, after being exposed to a high total dose of gamma rays radiation. The employed method consists mainly in a rapid, low power and in-situ annealing mitigation technique by Silicon-On-Insulator (SOI) micro-hotplates. Due to the ionizing effect of the gamma irradiation, the threshold voltages showed an average shift of 580 mV for N-channel transistors, and -360 mV for P-MOSFETs. A 4 min double-cycles annealing of components with a temperature of the heater up to 465°C, corresponding to a maximum power of 38 mW, ensured a partial recovery but was not sufficient for a full recovery. The degradation has been completely recovered after the use of a built-in high temperature annealing process, up to 975 °C for 8 min corresponding to a maximum power of 112 mW, which restored the normal operating characteristics for all devices after their irradiation.


  • Amor S, André N, Gérard P, Ali S, Udrea F, Tounsi F, Mezghani, B, Francis LA, and Flandre D.

    Reliable Characteristics and Stabilization of On-Membrane SOI MOSFET-based Components Heated Up to 335°C , Amor S, André N, Gérard P, Ali S, Udrea F, Tounsi F, Mezghani, B, Francis LA, and Flandre D. Reliable characteristics and stabilization of on-membrane SOI MOSFET-based components heated up to 335 C. Semiconductor Science and Technology. 2016; 32(1):014001. , 2016-12-17

    [Abstract] [Full Text]
    Abstract
    In this work we investigate the characteristics and critical operating temperatures of on-membrane embedded MOSFETs from experimental and analytical point of views. This study permits to conclude on the possibility of integrating the electronic circuitry in the close vicinity of micro-heaters and hot operation transducers. A series of calibrations and measurements has been performed to examine the behaviors of transistors, inverters and diodes, actuated at high temperature, on a membrane equipped with an on-chip integrated micro-heater. The studied n- and p-channel body-tied partially-depleted MOSFETs and CMOS inverter are embedded in a 5 µm-thick membrane fabricated by back-side MEMS micromachining using SOI technology. It has been noted that a pre-stabilization step after the harsh post-CMOS processing, through an in-situ high-temperature annealing using the micro-heater, is mandatory in order to stabilize the MOSFETs characteristics. The electrical characteristics and performance of the on-membrane MOS components are discussed when heated up to 335°C. This study proves the possibility to extend the potential of the micro-hotplate concept, under certain conditions, by embedding more electronic functionalities to interface on-membrane-based sensors leading to better sensing and actuation performances and a total area reduction, in particular for environmental or industrial applications.


New Events

  • 19 Nov
    Habilitation dissertation defense

    Dear colleagues and friends, You are cordially invited to the Habilitation dissertation defense of Dr Farès Tounsi, to be held on Friday, October 27th, 2017 entitled "Development and Analysis of CMOS-Based MEMS Microsensors"...

    Nov 19, 2017 | Read More

  • 19 Jul
    Doctoral dissertation defense

    Dear colleagues and friends, You are cordially invited to doctoral dissertation defense of Mohamed Hadj Said, to be held on Thursday, July 20th, 2017 entitled "Design, modeling and fabrication of a MEMS electrodynamic micro-sensor"...

    Jul 19, 2017 | Read More

  • 17 Sep
    Doctoral dissertation defense

    C'est avec un immense plaisir que je vous invite à ma soutenance de thèse de doctorat, qui aura lieu nchallah le lundi 28 Mars 2016 à 11h à l'Amphi 6 de l'ENIS. Le sujet est intitulé...

    Sep 17, 2016 | Read More

  • 30 Dec
    Doctoral dissertation defense
    Dear colleagues and friends, You are cordially invited to doctoral dissertation defense of Baligh Neji, to be held on Thursday, December 29th 2016, entitled "Design and development of an intelligent Self-Parking System for the next vehicles...

    Dec 30, 2016 | Read More

  • 14 Jan
    Doctoral dissertation defense

    Dear colleagues and friends, You are cordially invited to doctoral dissertation defense of Hanene Rouabeh, to be held on Thursday, December 29th, 2016 entitled "Contribution to the development of a driver assistance based robotic system"...

    Jan 14, 2017 | Read More

IEEE Solid State Tunisia Chapter Activities

  • 24 Jun
    Conference Invitation about MEMS

    We would like to invite interested IEEE members & researchers to a distinguished talk presented by « Prof. V. Ramgopal Rao » who is the Institute Chair ...

    Jun 24, 2014 | Read More



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