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Bouzid Ghazi

Dr Bouzid Ghazi
Assistant Professor

physique
FSS
Sfax University
 
Address: El kassas entre el ain et Manzel chaker 3013 SFAX Tunisia
Phone: 97854844
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Bouzid Ghazi

Publication


Amel Neifar, Ghazi Bouzid, Hatem Trabelsi and Mohamed Masmoudi

Design of Ultra Wideband Oscillator in 0.18 ?m Standard CMOS Technology , 1st International Conference on Advanced Technologies for Signal and Image Processing - ATSIP'2014 March 17-19, 2014, Sousse, Tunisia , 0000-00-00
[Abstract]
Abstract
This paper describes the design of a 3-5 GHz oscillator for Impulse-Radio Ultra-Wideband (IR-UWB) transceiver in the 0.18?m CMOS technology. The most important specifications for the voltage control oscillator (VCO) are provided and architecture for an existing frequency plan is introduced along with a discussion on its performance and implementation. The simulated VCO can achieve very wide tuning range along with low phase noise performance that varies from -92.02dBc/?Hz to -73dBc/Hz at 1 MHz frequency offset from the carrier and the overall power consumption is 18.1 mW from a 1.8V voltage supply.

Amel Neifar, Hatem Trabelsi, Ghazi Bouzid and Mohamed Masmoudi

Design of a zero crossing BFSK demodulator for a wireless sensor , 2012 International Conference on Design & Technology of Integrated Systems in Nanoscale Era , 0000-00-00
[Abstract]
Abstract
In this paper, a transistor-level simulation result of a Zero crossing BFSK demodulator is presented. The detector will be integrated into a frequency-hopped spread spectrum receiver operating in the 863-870 MHz ISM band, using the zigbee protocol (IEEE 802.15.4). This end to demodulate a received bit sequence with a bit rate equal to 20 kbps using 0.35 m CMOS technology and a 3V power supply. The proposed demodulator dedicated to an application of low power and low cost can maintain good performance under process variation. The BER results show that the proposed demodulator needs only 10.9dB input signal_to_noise ratio to achieve a BER of 10-3 as specified in zigbee standard.