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NEBHEN Jamel

Mr NEBHEN Jamel
Post-DOC

Brest
Lab-STICC, Telecom Bretagne
Sfax University
 
Address: Telecom Bretagne, Department of Electronics, Technopôle Brest-Iroise CS 83818 - 29238 Brest Cedex 3 29200 Brest France
Phone: 00 33 6 21 66 34 48
Fax:
email:
CV:

· Conception de CIs analogique/mixte et RF.
. Test et caractérisation de circuits électronique.
· Développement de toute la chaine allant du capteur jusqu’au circuit électronique de : Imageur numérique CMOS, Implant cochléaire, capteur de gaz ...
· Etude et conception (schéma,simulation, layout et verification) d’ASICs analogique et RF
· Conception Microélectronique: flot cadence (VirtuosoXL, Diva, Assura, Analog Artist, spectre), Calibre

· Electronique : Flow Cadence : Schematic, Simulation : Spectre (SpectreRF), SpectreS, Spectre Verilog; Layout : back- annotation, DRC : Diva, Assura et Calibre, LVS : Diva et Calibre; Ocean

· Maitrise du flot d’implémentation physique et des outils de conception front-end et back-end pour la conception des CIs CMOS.
· Bonne expérience en Placement-Routage et en validation post-layout (STA, DRC, LVS).
· Instrumentation basse fréquence et radiofréquence des capteurs M&NEMS.



NEBHEN Jamel

Publication


Jamel NEBHEN; Stephane MEILLERE; Mohamed MASMOUDI

A high linear and temperature compensation ring VCO for random number generator , ASP Journal of Low Power Electronics, JOLPE, Vol. 13, N° 4, December 2017. , 2017-12-01
[Abstract]
Abstract
In this paper, we propose a very simple ring VCO structure for use in a variety of applications ranging from the data encryption and mathematical simulation to the built-in-self test (BIST) of RF receivers. The proposed ring VCO has two advantages; its linearity is greatly improved compared to published VCO and the circuit is temperature compensated through a bandgap reference. The chip is fabricated in AMS 0.35 ?m CMOS technology with 2.5 V power supply. The total area is 0.02 mm2. A series of measurement results confirm the validity of the proposed circuit. Operating at 2.5 V, the output frequency is within 300 ± 2 MHz over the temperature range of -20 °C to 80 °C with power consumption of 400 ?W.

J. Nebhen, N. Brochard, J. Dubois, D. Ginhac

Design of Low-Noise and Low-Power Photoreceptor for CMOS Vision Sensor , IEEE International Conference on Electronics, Circuits and Systems (ICECS), 11 December 2016, Monte Carlo, Monaco, France. , 2016-12-11
[Abstract]
Abstract
This paper presents the design of a low-power and low-noise CMOS photo-transduction circuit. We propose to use a pseudo-cascode split-length transistor technique for noise reduction of photoreceptor in the subthreshold by exploiting the small size effects of CMOS transistors. Several power and noise optimizations, design requirements, and performance limitations relating to the CMOS photoreceptor are presented. This new structure with split-length transistor technique ensures low noise and low power consumption. The CMOS photoreceptor, implemented in a 130 nm standard CMOS technology with a 1.2 V supply voltage, achieves a noise floor of 0.05 µV within the frequency range from 1 Hz to 10 kHz. The current consumption of the CMOS photoreceptor is 827 nA. This paper shows the need for the design of phototransduction circuit at low voltage, low noise and how these constraints are reflected in the design of CMOS vision sensor.

N. Brochard, J. Nebhen, D. Ginhac

3D-IC: New Perspectives for a Digital Pixel Sensor , 10th International Conference on Distributed Smart Cameras (ICDSC 2016), Paris, France, , 2016-09-12
[Abstract]
Abstract
This paper presents the design of a low-power low-noise CMOS photo-transduction circuit. We propose to use a pseudo-cascode split-length transistor technique for noise reduction of photoreceptor in the subthreshold by exploiting the small size effects of CMOS transistors. Several power and noise optimizations, design requirements, and performance limitations relating to the CMOS photoreceptor are presented. This new structure with split-length transistor technique ensures low noise and low power consumption. The CMOS photoreceptor, implemented in a 130 nm standard CMOS technology with a 1.2 V supply voltage, achieves a 70-dB DC gain and 40° phase margin. It achieves a noise floor of 5 within the frequency range from 1 Hz to 10 kHz. The current consumption of the CMOS photoreceptor is 827 nA. The achieved performances make it one of the best among state-of-the-art photoreceptor in terms of noise and power consumption. This paper shows the need for the design of phototransduction circuit at low voltage, low noise and how these constraints are reflected in the design of CMOS vision sensor.

N. Brochard, J. Nebhen, J. Dubois, D. Ginhac

A 1000 µm2 3D-IC Multi-Resolution Digital Pixel Sensor , SPIE Photonics Europe Conference, Brussels, Belgium , 2016-04-03
[Abstract]
Abstract
This paper presents a digital pixel sensor (DPS) integrating a sigma-delta analog-to-digital converter (ADC) at pixel level. The digital pixel includes a photodiode, a delta-sigma modulation and a digital decimation filter. It features adaptive dynamic range and multiple resolutions (up to 10-bit) with a high linearity. A specific row decoder and column decoder are also designed to permit to read a specific pixel chosen in the matrix and its neighborhood of 4 x 4. Finally, a complete design with the CMOS 130 nm 3D-IC FaStack Tezzaron technology is also described, revealing a high fill-factor of about 80%.

J. Nebhen, S. Meillère, M. Masmoudi, J. L. Seguin, K. Aguir

Design of new low-noise and low-power CMOS differential pair , Electronics Letters 3rd September 2015 Vol. 51 No. 18 pp. 1433–1435 , 2015-07-23
[Abstract]
Abstract
This paper presents a novel structure of a CMOS differential pair, suitable for low supply voltages and low power consumption as well as a much higher gain than that of a conventional differential pair. This structure is based on the new technique of composite transistors. This paper shows the need for the design of integrated circuits at low voltage, low power consumption and how this constraint is reflected in the design of digital integrated circuits and design of analog integrated circuits.

J. Nebhen, S. Meillere, J-L. Seguin, K. Aguir, M. Masmoudi

Low Noise CMOS Chopper Amplifier for MEMS Gas Sensor , IEEE International Conference on Autonomous and Intelligent Systems AIS, Burnaby, BC, Canada , 2011-06-10
[Abstract]
Abstract
We describe in this paper a low-noise, low-power and low-voltage analog front-end amplifier dedicated to high resistive gas sensor detection. A mobile sensor system for very low level signals such as gas spikes detection is required to implement with a scaled CMOS technology. For a key circuit of these systems, a Chopper Stabilization Amplifier (CHS) which suppresses DC offset and 1/f noise figure of MOS devices is commonly used. This CHS operates from a modest supply voltage of ±1.25 V, drawing 4 ?A of current thus consuming 5 ?W of power. The resulting equivalent input referred noise is 0.19 nV / Hz for a chopping frequency of 210 kHz.

J. Nebhen, S. Meillere, J-L. Seguin, K. Aguir, M. Masmoudi, H. Barthelemy

Low Noise Micro-Power Chopper Amplifier for MEMS Gas Sensor , 18th IEEE International Conference Mixed Design of Integrated Circuits and Systems, Poland , 2011-06-16
[Abstract]
Abstract
We describe in this paper a low-noise, low-power and low-voltage analog front-end amplifier dedicated to high resistive gas sensor detection. A mobile sensor system for very low level signals such as gas spikes detection is required to implement with a scaled CMOS technology. For a key circuit of these systems, a Chopper Stabilization Amplifier (CHS) which suppresses DC offset and 1/f noise figure of MOS devices is commonly used. This CHS operates from a modest supply voltage of ±1.25 V, drawing 4 ?A of current thus consuming 5 ?W of power. The resulting equivalent input referred noise is 0.19 nV / Hz for a chopping frequency of 210 kHz.

J. Nebhen, S. Meillere, J-L. Seguin, K. Aguir, M. Masmoudi, H. Barthelemy

A 250 ?W 0.194 nV/rtHz Chopper-Stabilized Instrumentation Amplifier for MEMS Gas Sensor , 7th IEEE International conference on Design & Technology of Integrated Systems in nanoscale era, DTIS, Gammarth, Tunisia , 2012-05-16
[Abstract]
Abstract
In this paper, a low-noise, low-power and low voltage Chopper Stabilized CMOS Amplifier (CHS-A) is presented and simulated using transistor model parameters of the AMS 0.35 ?m CMOS process. Chopping is used to modulate the offset away from the output signal where it can be easily filtered out, providing continuous offset reduction which is insensitive to drift. The CHS was simulated using typical transistor model parameters BSIM 3V3 of the 0.35 ?m CMOS process technology from AMS [1]. Under at ±1.25 V power supply and a voltage gain of 49dB, the total power consumption is 250 ?W only. At the same simulation condition, it achieves a noise floor of 0.194 nV / Hz within the frequency range from 1 kHz to 10 kHz and the inband PSRR is above 90, the CMRR exceeds 120 dB. The circuit occupies an effective small chip area of 3.233 mm2.

J. Nebhen, S. Meillere, J-L. Seguin, K. Aguir, M. Masmoudi, H. Barthelemy

A Temperature Compensated CMOS Ring Oscillator For Wireless Sensing Applications , 10th IEEE International NEWCAS Conference, NEWCAS, Montréal, Canada , 2012-06-17
[Abstract]
Abstract
This paper presents a CMOS voltage controlled ring oscillator (VCO) with temperature compensation circuit suitable for low-cost and low-power wireless sensing applications. To operate at low frequency, a control voltage generated by a CMOS bandgap reference (BGR) is described and the measurement results of the fabricated chips are presented. The output voltage of the reference is set by resistive subdivision. In order to achieve small area and low power consumption, n-well resistors are used. This design features a reference voltage of 1V. The chip is fabricated in AMS 0.35 ?m CMOS process with an area of 0.032mm2. Operating at 1.25V, the output frequency is within 200±l0kHz over the temperature range of -25°C to 80°C with power consumption of 810?W.

J. Nebhen, S. Meillere, J-L. Seguin, K. Aguir, M. Masmoudi, H. Barthelemy

A temperature Compensated CMOS Ring Oscillator For Chopper Amplifier MEMS Gas Sensor , 8th Conference on Ph.D. Research in Microelectronics & Electronics, PRIME, Aachen, Germany , 2012-06-12
[Abstract]
Abstract
This paper presents a CMOS voltage controlled ring oscillator (VCO) with temperature compensation circuit suitable for low-cost and low-power MEMS gas sensor. This compensated ring oscillator is dedicated to Chopper Stabilized CMOS Amplifier (CHS-A). To operate at low frequency, a control voltage generated by a CMOS bandgap reference (BGR) is described and the measurement results of the fabricated chips are presented. The output voltage of the reference is set by resistive subdivision. In order to achieve small area and low power consumption, n-well resistors are used. This design features a reference voltage of 1V. The chip is fabricated in AMS 0.35 ?m CMOS process with an area of 0.032mm2. Operating at 1.25V, the output frequency is within 200±l0kHz over the temperature range of -25°C to 80°C with power consumption of 810?W.

E. Savary, J. Nebhen, W. Rahajandraibe, C. Dufaza, S. Meillère, E. Kussener, H. Barthélemy

Readout Electronic for Digital Output Resistive NEMS Audio Sensor , 8th IEEE International conference on Design & Technology of Integrated Systems in nanoscale era, DTIS , 2013-03-26
[Abstract]
Abstract
Investigation of readout electronic dedicated to electromechanical audio sensor is presented. The circuit is able of reading piezoresistive gauge implemented with silicon nanowire (NEMS) and bring electromechanical signal to highresolution digital output.

F. Haddad, W. Rahajandraibe, H. Aziza, K. Castellani-Coulié, J-M. Portal, J. Nebhen and H. Barthélemy

Low-Cost Auto-Calibration of Passive Polyphase Filter In Image Reject Receiver , IEEE International Conference on Electronics, Circuits, and Systems (ICECS), Abu Dhabi, UAE , 2013-12-08
[Abstract]
Abstract
A low-cost auto-calibration technique of Radio- Frequency (RF) Passive Polyphase Filter (PPF) for high image rejection in low Intermediate Frequency receiver is presented. The resistance values of the filter are process and temperature dependent with great mismatch constraints especially in the RF domain. That can severely impact the circuit performances if not controlled. In order to overcome this limitation, an in-line auto-calibration of the PPF resistance values, based on Design Of Experiment (DOE) methodology, is presented. Using DOE, a model is derived from thermal and process deviations of the chip responses. This approach results in a robust and low-cost solution.

J. Nebhen, E. Savary, W. Rahajandraibe, C. Dufaza, S. Meillère, E. Kussener, H. Barthélemy

Low-Noise CMOS amplifier for readout electronic of resistive NEMS audio sensor , IEEE Design, Test, Integration & Packaging of MEMS/MOEMS, Cannes Cote d’Azur, France , 2014-04-01
[Abstract]
Abstract
Investigation of readout electronic dedicated to electromechanical audio sensor is presented. The circuit is able of reading piezoresistive gauge implemented with silicon nanowire (NEMS) and bring electromechanical signal to high-resolution digital output. Low-noise low-power CMOS operational transconductance amplifier (OTA) is presented. The low-noise amplifier (LNA) has been designed in a 0.28 ?m CMOS process with a 2.5 V supply voltage and occupies an area of 120 x 160 ?m2. For the Post-layout Simulation, the OTA achieves a 65 dB DC gain. It achieves a noise floor of 6 nV/?Hz within the frequency range from 1 Hz to 10 kHz. The total power consumption including the common mode feedback circuit (CMFB) and the biasing circuit is 150 ?W.

J. Nebhen, E. Savary, W. Rahajandraibe, C. Dufaza, S. Meillère, E. Kussener, H. Barthélemy

Low-Noise CMOS Analog-to-Digital Interface for MEMS Resistive Microphone , IEEE International Conference on Electronics, Circuits, and Systems (ICECS), Abu Dhabi, UAE , 2013-12-08
[Abstract]
Abstract
This paper presents the design and electrical implementation of a CMOS integrated analog to digital interface dedicated to the hybrid integration of a MEMS resistive microphone with readout interface. Audio sensing is achieved with an innovative low-cost technology that implements piezoresistive detection in MEMS devices with single crystal silicon nanowires. The circuit is composed of a low-noise instrumentation preamplifier and a fourth order, single bit continuous-time sigma-delta modulator (CT-??M) systems. The circuit has been designed in a 0.28 ?m CMOS process with a 2.5 V supply voltage and occupies an area of 1mm2. For the Postlayout Simulation, the design of both circuits achieves a noise floor of 8 nV/?Hz within the frequency range from 10 Hz to 10 kHz. The complete interface circuit features a current consumption of 4mA.

J. Nebhen, E. Savary, W. Rahajandraibe, C. Dufaza, S. Meillère, E. Kussener, H. Barthélemy

Low-Noise Smart Sensor Based On Silicon Nanowires For MEMS Resistive Microphone , IEEE Sensors, Baltimore, Maryland, USA , 2013-11-03
[Abstract]
Abstract
The design of CMOS integrated circuits dedicated to hybrid integration of a MEMS resistive microphone with readout interface is presented. Audio sensing is achieved with an innovative low-cost technology that implements piezoresistive detection in MEMS devices with single crystal silicon nanowires. The complete circuit includes a custom designed analog frontend consisting of a sensor conditioning and a fourth order single bit continuous-time sigma-delta modulator (CT-??M). The complete interface circuit exhibits a current consumption of 2mA. The obtained smart-sensor features a reduced output data rate that is suitable for a wireless sensor network with direct transmission of the raw data to a remote base station.

J. Nebhen, S. Meillere, J-L. Seguin, K. Aguir, M. Masmoudi, H. Barthelemy

Low Noise Micro-Power Chopper Amplifier for MEMS Gas Sensor , International Journal of Microelectronics and Computer Science, IJMCS, Vol. 2, No. 4, pp. 146-155 , 2011-05-10
[Abstract]
Abstract
In this paper, a low-noise, low-power and low voltage Chopper Stabilized CMOS Amplifier (CHS-A) is presented and simulated using transistor model parameters of the AMS 0.35 ?m CMOS process. This CHS-A is dedicated to high resistive gas sensor detection. The proposed CHS-A using Chopper Stabilization technique (CHS) exhibits an equivalent input referred noise of only 0.194 nV / Hz for a chopping frequency of 210 kHz under ±1.25 V supply voltage and 26.5 dB voltage gain. The inband PSRR is above 90 and the CMRR exceeds 120 dB. At the same simulation condition, the total power consumption is 5 ?W only.

J. Nebhen, S. Meillere, J-L. Seguin, K. Aguir, M. Masmoudi

Low Noise CMOS Chopper Amplifier for MEMS Gas Sensor , Lecture Notes in Computer Sciences, Springer 2011, volume 6752/2011, pp. 366-373 , 2011-09-01
[Abstract]
Abstract
We describe in this paper a low-noise, low-power and low-voltage analog front-end amplifier dedicated to high resistive gas sensor detection. A mobile sensor system for very low level signals such as gas spikes detection is required to implement with a scaled CMOS technology. For a key circuit of these systems, a Chopper Stabilization Amplifier (CHS) which

J. Nebhen, S. Meillere, J-L. Seguin, K. Aguir, M. Masmoudi, H. Barthelemy

A Temperature Compensated CMOS Ring Oscillator For Wireless Sensing Applications , Journal of Electrical and Electronics Engineering, JEEE, Vol.2, Issue 1, pp. 1-10, Sep 2012. (ISSN 2250-2424) , 2012-09-01
[Abstract]
Abstract
This paper presents a CMOS voltage controlled ring oscillator (VCO) with temperature compensation circuit suitable for low-cost and low-power wireless sensing applications. To operate at low frequency, a control voltage generated by a CMOS bandgap reference (BGR) is described and the measurement results of the fabricated chips are presented. The output voltage of the reference is set by resistive subdivision. In order to achieve small area and low power consumption, n-well resistors are used. This design features a reference voltage of 1V. The chip is fabricated in AMS 0.35 ?m CMOS process with an area of 0.032mm2. Operating at 1.25V, the output frequency is within 200±l0kHz over the temperature range of -25°C to 80°C with power consumption of 810?W.

J. Nebhen, S. Meillere, J-L. Seguin, K. Aguir, M. Masmoudi, H. Barthelemy

Temperature Compensated CMOS Ring Oscillator For MEMS Gas Sensor , Analog Integrated Circuits and Signal Processing Journal (AICSP), Vol. 73, No. 3, pp. 82-95, June 2013. DOI 10.1007/s10470-013-0095-x , 2013-06-05
[Abstract]
Abstract
This paper presents a CMOS voltage controlled ring oscillator with temperature compensation circuit suitable for low-cost and low-power gas sensor. To operate at low frequency, a control voltage generated by a CMOS bandgap reference is described and the measurement results of the fabricated chips are presented. The output voltage of the reference is set by resistive subdivision. In order to achieve small area and low power consumption, nwell resistors are used. This design features a reference voltage of 1 V. The chip is fabricated in AMS 0.35 lm CMOS process with an area of 0.032 mm2. Operating at 1.25 V, the output frequency is within 200 ± l0 kHz over the temperature range of -25 to 80 C with a power consumption of 810 lW.

J. Nebhen, S. Meillere, J-L. Seguin, K. Aguir, M. Masmoudi, H. Barthelemy

A Temperature Compensated CMOS Ring Oscillator For Wireless Sensoing Applications , Journal of Sign. Process. Syst. Vol. 72, No. 2 1, pp. 61-71, Aug 2013. DOI 10.1007/s11265-013-0794-7 , 2013-08-10
[Abstract]
Abstract
This paper presents a CMOS voltage controlled ring oscillator (VCO) with temperature compensation circuit suitable for low-cost and low-power MEMS gas sensor. This compensated ring oscillator is dedicated to Chopper Stabilized CMOS Amplifier (CHS-A). To operate at low frequency, a control voltage generated by a CMOS bandgap reference (BGR) is described and the measurement results of the fabricated chips are presented. The output voltage of the reference is set by resistive subdivision. In order to achieve small area and low power consumption, n-well resistors are used. This design features a reference voltage of 1 V. The chip is fabricated in AMS 0.35 ?m CMOS process with an area of 0.032 mm2. Operating at 1.25 V, the output frequency is within 200±l0 kHz over the temperature range of ?25 °C to 80 °C with power consumption of 810 ?W.